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<h1>Indium arsenide, InAs</h1>

Indium arsenide (InAs) is a compound semiconductor material that belongs to the III-V group of semiconductors. It is known for its high electron mobility and narrow energy band gap, making it particularly useful in high-speed electronics and optoelectronics. InAs is a key material in the manufacture of infrared detectors, including those used for night-vision systems, and is also used in the fabrication of quantum dot structures. The material can be grown via techniques such as molecular beam epitaxy (MBE) or metal-organic chemical vapor deposition (MOCVD), and is often used in conjunction with other III-V semiconductor materials like GaAs or InP to form heterostructures or quantum wells. It has applications in photodetectors, high-frequency transistors, and other optoelectronic devices. Care should be exercised when working with InAs due to the toxicity of arsenic.

<h2>Other name</h2>
<ul>
<li>Indium(III) arsenide</li>
</ul>

<h2>External links</h2>
<ul>
<li><a href="https://en.wikipedia.org/wiki/Indium(III)_arsenide">Indium(III) arsenide - Wikipedia</a></li>
<li><a href="http://www.ioffe.ru/SVA/NSM/Semicond/InAs">Indium arsenide - NSM Archive</a></li>
</ul>
